Structure of Hydrated Chromium Oxide Film on Tin Free Steel
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چکیده
منابع مشابه
Tin oxide transparent thin-film transistors
A SnO2 transparent thin-film transistor (TTFT) is demonstrated. The SnO2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O2 at 600 ̊C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10–20 nm). Maximum field-effect mobilities of 0.8 cm2 V−1 s−1 and 2.0 cm2 V−1 s−1 are obtained for enhancem...
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ژورنال
عنوان ژورنال: Journal of the Japan Institute of Metals and Materials
سال: 1969
ISSN: 0021-4876,1880-6880
DOI: 10.2320/jinstmet1952.33.11_1295